Rectron Semiconductor Inc. MOSFET RM30P55LD-T

The RM30P55LD-T is a P-channel enhancement mode power MOSFET in a TO-252-2L package, designed for power switching applications including hard-switched and high-frequency circuits. It has a drain-source voltage rating of -55 V and a continuous drain current of -30 A at 25°C, reducing to -21 A at 100°C. The on-state resistance is 30 mΩ at -10 V gate-source voltage and -15 A drain current. The device features a single-pulse avalanche energy rating of 420 mJ and a thermal resistance junction-to-case of 2.3°C/W. It is fully characterized for avalanche robustness and is 100% UIS tested.