Rectron Semiconductor Inc. MOSFET RM30N100T2

The RM30N100T2 is an N-channel enhancement mode power MOSFET designed for power switching and high-frequency circuits. It comes in a TO-220-3L package with dimensions of 10.25 mm in length, 9.75 mm in width, and 8.1 mm in height. The device has a drain-source voltage rating of 100 V and a continuous drain current of 30 A at 25°C, decreasing to 21 A at 100°C case temperature. Its on-state resistance is 40 mΩ at 10 V gate bias and 50 mΩ at 5 V gate bias. The MOSFET supports a pulsed drain current of 70 A and a maximum power dissipation of 75 W. It features a thermal resistance from junction to case of 2.0 °C/W and is 100% UIS and Vds tested. The part is halogen-free and meets the AEC-Q200 standard.