Rectron Semiconductor Inc. MOSFET RM2N650LD-T

The RM2N650LD is an N-channel super junction MOSFET in a TO-252 package, designed for AC-DC switched mode power supplies, power factor correction, and industrial power applications. It has a drain-source voltage rating of 650 V, a continuous drain current of 1.3 A at 100°C case temperature, and a typical on-resistance of 2.5 Ω at 10 V gate drive. The device features a low gate charge of 10 nC, is 100% avalanche tested with a single pulse avalanche energy of 45 mJ, and complies with RoHS standards. Thermal resistance is 5.4 °C/W from junction to case and 75 °C/W from junction to ambient. The package dimensions are 6.50 to 6.70 mm in length, 6.00 to 6.20 mm in width, and 9.80 to 10.40 mm in lead length.