Rectron Semiconductor Inc. MOSFET RM24N200T1

RM24N200TI is an N-channel enhancement mode power MOSFET in a TO-220F package designed for power switching applications, including hard-switched and high-frequency circuits. It has a drain-source voltage rating of 200 V and a continuous drain current of 24 A at 25°C, reducing to 16.5 A at 100°C. The on-state resistance is typified at 62 mΩ at 10 V gate voltage, with a single-pulse avalanche energy of 250 mJ. Thermal resistance junction-to-ambient is 3.33°C/W. The device is 100% UIS and Vds tested, with an operating junction and storage temperature range of -55°C to 175°C.