Rectron Semiconductor Inc. MOSFET RM2312

The RM2312 is an N-channel enhancement mode power MOSFET designed for battery protection and load switching applications. It is packaged in an SOT-23 surface mount case measuring 2.80 to 3.00 mm in length and 1.20 to 1.40 mm in width. The device has a drain-source voltage rating of 20 V, a continuous drain current of 4.5 A at 25°C, and a maximum power dissipation of 1.25 W. Its on-state resistance is below 45 mΩ at 1.8 V gate voltage and below 33 mΩ at 4.5 V gate voltage. The SOT-23 package is halogen-free and the part is AEC-Q101 qualified when denoted by the V suffix. Thermal resistance from junction to ambient is 100 °C/W.