The RM20N60LD is an N-channel enhancement mode power MOSFET in a TO-252-2L package, rated for 60V drain-source voltage and 20A continuous drain current. It features a maximum on-state resistance of 35mΩ at 10V gate-source voltage and a single pulse avalanche energy rating of 72mJ. The device is 100% UIS tested and has an operating junction and storage temperature range of -55°C to 175°C. It meets AEC-Q101 qualification when marked with the V suffix. Thermal resistance from junction to case is 3.3°C/W. The package dimensions conform to TO-252 standard, with a body width of 6.000 to 6.200mm and lead span of 2.186 to 2.386mm.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM20N60LD-T |
| Product Name | MOSFET |
