Rectron Semiconductor Inc. MOSFET RM170N30DF

The RM170N30DF is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification in DC/DC converters. It is packaged in a DFN5X6-8L case and supports a continuous drain current of 170 A at 25°C, with a maximum drain-source voltage of 30 V. The device has a typical on-resistance of 1.35 mΩ at 10 V gate-source voltage and 1.8 mΩ at 4.5 V, and operates at junction temperatures up to 150°C. It is 100% UIS and ∆Vds tested, features Pb-free lead plating, and meets a thermal resistance of 1.67°C/W from junction to case. The MOSFET is rated for a single pulse avalanche energy of 890 mJ and has a total gate charge of 98 to 117 nC at 15 V gate-source voltage.