The RM15N650T2 is an N-channel super junction MOSFET in a TO-220 package, designed for AC-DC switching power supplies, PFC, and industrial power applications. It has a drain-source voltage rating of 650 V, a continuous drain current of 15 A at 25°C, and a maximum on-resistance of 260 mΩ at 10 V gate drive. The device features a gate charge of up to 45 nC and is 100% avalanche tested. It meets RoHS compliance and operates from -55°C to +150°C. Thermal resistance from junction to case is 3.73 °C/W. The package dimensions are 10.25 mm by 9.75 mm for the body, with a lead spacing of 2.54 mm.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM15N650T2 |
| Product Name | MOSFET |
