Rectron Semiconductor Inc. MOSFET RM135N100HD-T

Description
MOSFET D2-PAK MOSFET
Description
MOSFET D2-PAK MOSFET
Datasheet
Datasheet Summary
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The RM135N100HD is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification, featuring a 100V drain-source voltage rating and a continuous drain current of 135A. It comes in a TO-263-2L package and operates up to 175°C with a maximum on-resistance of 4.6mΩ at 10V gate-source voltage. The device is 100% UIS tested, Pb-free, and halogen-free, with a typical gate charge of 92nC and a single-pulse avalanche energy of 1050mJ. Thermal resistance from junction to case is 0.71°C/W.

Datasheet Summary
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The RM135N100HD is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification, featuring a 100V drain-source voltage rating and a continuous drain current of 135A. It comes in a TO-263-2L package and operates up to 175°C with a maximum on-resistance of 4.6mΩ at 10V gate-source voltage. The device is 100% UIS tested, Pb-free, and halogen-free, with a typical gate charge of 92nC and a single-pulse avalanche energy of 1050mJ. Thermal resistance from junction to case is 0.71°C/W.

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Sheung Wan, Hong Kong
MOSFET D2-PAK MOSFET

MOSFET D2-PAK MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM135N100HD-T
Product Name MOSFET
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