The RM1216 is a P-channel enhancement mode power MOSFET designed for load switching and PWM applications in compact form factors. It is packaged in a DFN2X2-6L case measuring 2 mm × 2 mm with a 0.65 mm pitch. The device has a drain-source voltage rating of -12 V and a continuous drain current of -16 A, with an on-resistance of 18 mΩ at -4.5 V gate voltage and 22 mΩ at -2.5 V gate voltage. It supports a maximum power dissipation of 18 W and operates from -55°C to 150°C. Thermal resistance from junction to case is 6.9°C/W. The device meets AEC-Q200 qualification and RoHS standards.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM1216 |
| Product Name | MOSFET |
