Rectron Semiconductor Inc. MOSFET RM110N85T2

The RM110N85T2 is an N-channel super trench power MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a TO-220-3L case, with a continuous drain current rating of 110 A and a drain-source voltage rating of 85 V. The on-resistance is 6 mΩ maximum at a gate-source voltage of 10 V. The device supports an operating junction temperature up to 175 °C and has a maximum power dissipation of 145 W. It is 100% UIS tested and features a low gate charge of 54 nC and a fast switching performance with a total gate charge of 54 nC, a gate-source charge of 20 nC, and a gate-drain charge of 9 nC.