Rectron Semiconductor Inc. MOSFET RM100N30DF

The RM100N30DF is an N-channel enhancement mode power MOSFET designed for power switching and high-frequency applications. It features a DFN5X6-8L package with a maximum drain-source voltage of 30 V, continuous drain current of 100 A at 25°C case temperature, and an on-resistance of 2.6 mΩ at 10 V gate voltage. The device supports pulsed drain currents up to 300 A and dissipates up to 55 W with a derating factor of 0.43 W/°C. Operating junction and storage temperatures range from -55°C to 150°C. It is halogen-free and fully characterized for avalanche energy and ESD capability. Thermal resistance junction-to-case is 2.421°C/W. The part meets no explicitly stated industry standards beyond its electrical and thermal specifications.