Rectron Semiconductor Inc. MOSFET RM04N30S2

Description
MOSFET SOT-23 MOSFET
Description
MOSFET SOT-23 MOSFET
Datasheet
Datasheet Summary
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The RM04N30S2 is a 30V N-channel MOSFET in an SOT-23 surface mount package, designed for load switching and PWM applications. It has a maximum continuous drain current of 3.6A and a maximum power dissipation of 1.7W. The drain-source on-state resistance is 58mΩ at VGS=10V and 73mΩ at VGS=4.5V. The device features a gate threshold voltage range of 1.2V to 2.2V, a total gate charge of 4.0nC, and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction to ambient is 73.5°C/W when mounted on FR4 PCB. The device is lead-free and complies with surface mount requirements.

Datasheet Summary
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The RM04N30S2 is a 30V N-channel MOSFET in an SOT-23 surface mount package, designed for load switching and PWM applications. It has a maximum continuous drain current of 3.6A and a maximum power dissipation of 1.7W. The drain-source on-state resistance is 58mΩ at VGS=10V and 73mΩ at VGS=4.5V. The device features a gate threshold voltage range of 1.2V to 2.2V, a total gate charge of 4.0nC, and operates within a junction temperature range of -55°C to 150°C. Thermal resistance from junction to ambient is 73.5°C/W when mounted on FR4 PCB. The device is lead-free and complies with surface mount requirements.

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Sheung Wan, Hong Kong
MOSFET SOT-23 MOSFET

MOSFET SOT-23 MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM04N30S2
Product Name MOSFET
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