Rectron Semiconductor Inc. Bipolar Transistors - BJT PN2907A-T

PN2907A-T is a PNP bipolar junction transistor in a TO-92 package, intended for general-purpose switching and amplification applications. The device has a maximum collector current of 0.6 A, a collector-base breakdown voltage of 75 V, and a collector-emitter breakdown voltage of 60 V. Power dissipation is rated at 625 mW at 25°C ambient temperature, with a thermal resistance junction-to-ambient of 200°C/W. Operating and storage junction temperatures range from -55°C to +150°C. The transistor features a minimum DC current gain of 35 at 10 mA collector current and 40 at 500 mA, and a current-gain-bandwidth product of 300 MHz. The base-emitter saturation voltage is up to 1.2 V at 150 mA collector current. The case is molded plastic with UL 94V-0 flame retardant rating, and the leads are compliant with MIL-STD-202E method 208C. The device is fully RoHS compliant with 100% Sn plating.