Rectron Semiconductor Inc. Bipolar Transistors - BJT MMBT5401

MMBT5401 is a silicon PNP bipolar junction transistor for high-voltage switching, housed in an SOT-23 package. It has a collector-base breakdown voltage of -160 V, a collector-emitter breakdown voltage of -150 V, and a maximum collector current of -600 mA. The device dissipates up to 300 mW and operates with a junction temperature range of -65°C to 150°C. DC current gain ranges from 50 to 300 depending on collector current. The collector-emitter saturation voltage is -0.5 V at -50 mA collector current and -5 mA base current. The transistor is AEC-Q101 qualified and halogen-free when marked with a V suffix. Its transition frequency is 100 MHz.