Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBTA56

Description
Bipolar Transistors - BJT Darlington Trans PNP,0.5A,80V
Description
Bipolar Transistors - BJT Darlington Trans PNP,0.5A,80V
Datasheet
Datasheet Summary
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The CMBTA56 is a PNP bipolar junction transistor in a SOT-23 package, rated for a collector-emitter voltage of 60 V, a collector current of 0.5 A, and a power dissipation of 0.25 W. It has a DC current gain (hFE) range of 100 to a minimum of 100, a collector-base voltage of 60 V, and an emitter-base voltage of 4 V. The saturation voltage (VCE(sat)) is 0.25 V at a collector current of 1 mA and a base current of 100 µA, with a transition frequency of 100 MHz.

Datasheet Summary
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The CMBTA56 is a PNP bipolar junction transistor in a SOT-23 package, rated for a collector-emitter voltage of 60 V, a collector current of 0.5 A, and a power dissipation of 0.25 W. It has a DC current gain (hFE) range of 100 to a minimum of 100, a collector-base voltage of 60 V, and an emitter-base voltage of 4 V. The saturation voltage (VCE(sat)) is 0.25 V at a collector current of 1 mA and a base current of 100 µA, with a transition frequency of 100 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBTA56
Bipolar Transistors - BJT CMBTA56
Bipolar Transistors - BJT Darlington Trans PNP,0.5A,80V

Bipolar Transistors - BJT Darlington Trans PNP,0.5A,80V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBTA56
Product Name Bipolar Transistors - BJT
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