Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBTA06

Description
Bipolar Transistors - BJT Si Planar Trans NPN,0.5A,80V
Description
Bipolar Transistors - BJT Si Planar Trans NPN,0.5A,80V
Datasheet
Datasheet Summary
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CMBTA06 is an NPN bipolar transistor in a SOT-23 package, rated for a collector-emitter voltage of 80 V, collector current of 0.5 A, and power dissipation of 0.25 W. It has a DC current gain (hFE) range of 100 to infinity, with a collector-emitter saturation voltage of 0.25 V at 10 mA collector current and 1 mA base current. The device is designed for general-purpose switching and amplification applications.

Datasheet Summary
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CMBTA06 is an NPN bipolar transistor in a SOT-23 package, rated for a collector-emitter voltage of 80 V, collector current of 0.5 A, and power dissipation of 0.25 W. It has a DC current gain (hFE) range of 100 to infinity, with a collector-emitter saturation voltage of 0.25 V at 10 mA collector current and 1 mA base current. The device is designed for general-purpose switching and amplification applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBTA06
Bipolar Transistors - BJT CMBTA06
Bipolar Transistors - BJT Si Planar Trans NPN,0.5A,80V

Bipolar Transistors - BJT Si Planar Trans NPN,0.5A,80V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBTA06
Product Name Bipolar Transistors - BJT
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