NPN silicon bipolar junction transistor in SOT-23 package rated for 160 V collector-emitter voltage, 0.6 A collector current, and 0.25 W power dissipation. The device has a minimum current gain of 80 at 10 mA collector current, a maximal collector-emitter saturation voltage of 0.15 V at 5 mA base current, and operates with a transition frequency up to 300 MHz. Features a collector-base breakdown voltage of 180 V and emitter-base breakdown voltage of 6 V. Complies with RoHS standards.
Bipolar Transistors - BJT SOT23,NPN,0.6A,160V HighVolt
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMBT5551 |
| Product Name | Bipolar Transistors - BJT |
