Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT5551-T

Description
Bipolar Transistors - BJT NPN 0.6A 160V HV
Description
Bipolar Transistors - BJT NPN 0.6A 160V HV
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NPN bipolar transistor in SOT-23 package with a collector-emitter voltage rating of 160 V, collector current of 0.6 A, power dissipation of 0.25 W, and current gain (hFE) ranging from 80 to 250 at a collector current of 10 mA and collector-emitter voltage of 5 V. The device has a collector-base voltage of 180 V, emitter-base voltage of 6 V, and a saturation voltage of 0.15 V at 10 mA collector current and 0.5 A base current. Transition frequency is 100 MHz at 10 mA collector current.

Datasheet Summary
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NPN bipolar transistor in SOT-23 package with a collector-emitter voltage rating of 160 V, collector current of 0.6 A, power dissipation of 0.25 W, and current gain (hFE) ranging from 80 to 250 at a collector current of 10 mA and collector-emitter voltage of 5 V. The device has a collector-base voltage of 180 V, emitter-base voltage of 6 V, and a saturation voltage of 0.15 V at 10 mA collector current and 0.5 A base current. Transition frequency is 100 MHz at 10 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT5551-T
Bipolar Transistors - BJT CMBT5551-T
Bipolar Transistors - BJT NPN 0.6A 160V HV

Bipolar Transistors - BJT NPN 0.6A 160V HV

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT5551-T
Product Name Bipolar Transistors - BJT
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