Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT4401

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Bipolar Transistors - BJT NPN,0.6A,40V GenPur
Description
Bipolar Transistors - BJT NPN,0.6A,40V GenPur
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NPN bipolar transistor in SOT-23 package with a collector-emitter voltage rating of 40 V, collector current of 0.6 A, and power dissipation of 0.25 W. Current gain (hFE) ranges from 100 to 300 at a collector current of 150 mA and collector-emitter voltage of 1 V. Collector-emitter saturation voltage is 0.40 V at 150 mA base current and 1 A collector current. Base-emitter saturation voltage is 0.75 V at 150 mA collector current and 15 mA base current. Transition frequency is 150 MHz at 10 mA collector current.

Datasheet Summary
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NPN bipolar transistor in SOT-23 package with a collector-emitter voltage rating of 40 V, collector current of 0.6 A, and power dissipation of 0.25 W. Current gain (hFE) ranges from 100 to 300 at a collector current of 150 mA and collector-emitter voltage of 1 V. Collector-emitter saturation voltage is 0.40 V at 150 mA base current and 1 A collector current. Base-emitter saturation voltage is 0.75 V at 150 mA collector current and 15 mA base current. Transition frequency is 150 MHz at 10 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT4401
Bipolar Transistors - BJT CMBT4401
Bipolar Transistors - BJT NPN,0.6A,40V GenPur

Bipolar Transistors - BJT NPN,0.6A,40V GenPur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT4401
Product Name Bipolar Transistors - BJT
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