Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT3906

Description
Bipolar Transistors - BJT PNP,0.2A,40V GenPur
Description
Bipolar Transistors - BJT PNP,0.2A,40V GenPur
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PNP bipolar junction transistor in SOT-23 package with a collector-emitter voltage rating of 40 V, collector current of 0.2 A, and power dissipation of 0.25 W. It has a minimum current gain (hFE) of 100 at a collector current of 10 mA and a base-emitter saturation voltage of 0.65 V at 10 mA collector current. The device is designed for general-purpose switching and amplification applications.

Datasheet Summary
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PNP bipolar junction transistor in SOT-23 package with a collector-emitter voltage rating of 40 V, collector current of 0.2 A, and power dissipation of 0.25 W. It has a minimum current gain (hFE) of 100 at a collector current of 10 mA and a base-emitter saturation voltage of 0.65 V at 10 mA collector current. The device is designed for general-purpose switching and amplification applications.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT3906
Bipolar Transistors - BJT CMBT3906
Bipolar Transistors - BJT PNP,0.2A,40V GenPur

Bipolar Transistors - BJT PNP,0.2A,40V GenPur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT3906
Product Name Bipolar Transistors - BJT
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