Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT3904-T

Description
Bipolar Transistors - BJT NPN 0.2A 40V Gen Pur
Description
Bipolar Transistors - BJT NPN 0.2A 40V Gen Pur
Datasheet
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CMBT3904-T is an NPN bipolar junction transistor in a SOT-23 package with a maximum collector-emitter voltage of 40 V, a collector current of 0.2 A, and a power dissipation of 0.25 W. It has a DC current gain (hFE) ranging from 100 to 300 at a collector current of 10 mA and a collector-emitter saturation voltage of 0.20 V at 1 mA base current. The device features an electrical characteristic of 6 V base-emitter saturation voltage with a transition frequency of 10 MHz at 10 mA collector current.

Datasheet Summary
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CMBT3904-T is an NPN bipolar junction transistor in a SOT-23 package with a maximum collector-emitter voltage of 40 V, a collector current of 0.2 A, and a power dissipation of 0.25 W. It has a DC current gain (hFE) ranging from 100 to 300 at a collector current of 10 mA and a collector-emitter saturation voltage of 0.20 V at 1 mA base current. The device features an electrical characteristic of 6 V base-emitter saturation voltage with a transition frequency of 10 MHz at 10 mA collector current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT3904-T
Bipolar Transistors - BJT CMBT3904-T
Bipolar Transistors - BJT NPN 0.2A 40V Gen Pur

Bipolar Transistors - BJT NPN 0.2A 40V Gen Pur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT3904-T
Product Name Bipolar Transistors - BJT
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