Rectron Semiconductor Inc. Bipolar Transistors - BJT CMBT2907A

Description
Bipolar Transistors - BJT PNP,0.6A,60V GenPur
Description
Bipolar Transistors - BJT PNP,0.6A,60V GenPur
Datasheet
Datasheet Summary
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CMBT2907A is a PNP silicon planar epitaxial transistor in an SOT-23 surface-mount package with a collector-emitter voltage rating of 60 V and a collector current of 600 mA. It dissipates up to 250 mW at 25 °C ambient temperature and has a junction temperature rating of 150 °C. The DC current gain (hFE) ranges from 50 to 100 depending on collector current, with a transition frequency exceeding 200 MHz. Switching times are specified with turn-off time under 100 ns. The device meets standard operating and storage temperature ranges from -55 °C to +150 °C and has a thermal resistance of 500 K/W in free air.

Datasheet Summary
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CMBT2907A is a PNP silicon planar epitaxial transistor in an SOT-23 surface-mount package with a collector-emitter voltage rating of 60 V and a collector current of 600 mA. It dissipates up to 250 mW at 25 °C ambient temperature and has a junction temperature rating of 150 °C. The DC current gain (hFE) ranges from 50 to 100 depending on collector current, with a transition frequency exceeding 200 MHz. Switching times are specified with turn-off time under 100 ns. The device meets standard operating and storage temperature ranges from -55 °C to +150 °C and has a thermal resistance of 500 K/W in free air.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
CMBT2907A
Bipolar Transistors - BJT CMBT2907A
Bipolar Transistors - BJT PNP,0.6A,60V GenPur

Bipolar Transistors - BJT PNP,0.6A,60V GenPur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number CMBT2907A
Product Name Bipolar Transistors - BJT
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