PNP silicon planar epitaxial transistor in SOT-23 surface mount package, rated for a collector-emitter voltage of 60 V, collector current of 600 mA, and power dissipation of 250 mW at 25 °C. DC current gain (hFE) ranges from 50 to 100 depending on collector current, with a transition frequency exceeding 200 MHz. Junction temperature rating is 150 °C, and thermal resistance from junction to ambient is 500 K/W in free air.
Bipolar Transistors - BJT PNP 0.6A 60V Gen Pur
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | CMBT2907A-T |
| Product Name | Bipolar Transistors - BJT |
