PNP silicon planar epitaxial transistors for general-purpose amplification and switching, in a SOT-23 package measuring 2.9 mm x 1.3 mm x 1.1 mm. The BC857 variant has a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. Power dissipation is rated at 250 mW with a maximum junction temperature of 150 °C. Current gain (hFE) ranges from 125 to 800 at 2 mA collector current. Transition frequency is 100 MHz at 10 mA. The device meets RoHS standards and is qualified under AEC-Q200.
Bipolar Transistors - BJT Ep Trans PNP,0.1A,45V
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC857-T |
| Product Name | Bipolar Transistors - BJT |
