PNP silicon planar epitaxial transistors for general-purpose amplification and switching, housed in a SOT-23 package with dimensions of 0.112 inch (2.85 mm) width, 0.083 inch (2.1 mm) length, and 0.032 inch (0.8 mm) height. Maximum collector-emitter voltage is 65 V, collector current is 100 mA DC and 200 mA peak, and total power dissipation is 250 mW at 60 °C ambient temperature. The junction temperature rating is 150 °C. DC current gain (hFE) ranges from 125 to 475 for the BC856 variant at 2 mA collector current and 5 V collector-emitter voltage. Transition frequency is 100 MHz at 10 mA collector current. Base-emitter on voltage is 0.6 V at 2 mA collector current.
Bipolar Transistors - BJT PNP 0.1A 65V LN
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BC856-T |
| Product Name | Bipolar Transistors - BJT |
