Rectron Semiconductor Inc. Bipolar Transistors - BJT BC848-T

BC848-T is an NPN silicon planar epitaxial transistor in SOT-23 surface-mount package, rated for a collector-emitter voltage of 30 V, collector current of 100 mA, and total power dissipation of 250 mW at 25 °C. The junction temperature rating is 150 °C, with thermal resistance from junction to ambient of 500 K/W when mounted on a ceramic substrate of 8 mm × 10 mm × 0.7 mm. The device has a collector-emitter saturation voltage of up to 0.60 V at 100 mA collector current and 5 mA base current. DC current gain ranges from 110 to 800, and transition frequency is 100 MHz. Storage temperature ranges from -55 °C to +150 °C.