Rectron Semiconductor Inc. Bipolar Transistors - BJT BC846-T

NPN silicon planar epitaxial transistors in SOT-23 surface-mount package for general-purpose amplification and switching. The BC846 variant has a collector-base voltage rating of 80 V, collector-emitter voltage of 65 V, and continuous collector current of 100 mA. Power dissipation is 250 mW at 25 °C with thermal resistance of 500 K/W. DC current gain (h₏E) ranges from 110 to 450 at I₌ = 2 mA and V₌E = 5 V. Transition frequency is 100 MHz at I₌ = 10 mA. Operating junction temperature ranges from -55 °C to 150 °C. The device is RoHS compliant.