Rectron Semiconductor Inc. Bipolar Transistors - BJT BC807-T

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Bipolar Transistors - BJT PNP 0.8A 45V Gen Pur
Description
Bipolar Transistors - BJT PNP 0.8A 45V Gen Pur
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PNP bipolar junction transistor in SOT-23 package for general-purpose switching and amplification, with a collector-emitter voltage of 45 V, collector current of 0.5 A, power dissipation of 0.25 W, and current gain (hFE) ranging from 100 to 600 at 1 mA collector current and 5 V collector-emitter voltage. Base-emitter saturation voltage is 0.70 V at 500 mA collector current and 10 mA base current. Operating junction temperature is up to 150 °C. Complies with RoHS.

Datasheet Summary
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PNP bipolar junction transistor in SOT-23 package for general-purpose switching and amplification, with a collector-emitter voltage of 45 V, collector current of 0.5 A, power dissipation of 0.25 W, and current gain (hFE) ranging from 100 to 600 at 1 mA collector current and 5 V collector-emitter voltage. Base-emitter saturation voltage is 0.70 V at 500 mA collector current and 10 mA base current. Operating junction temperature is up to 150 °C. Complies with RoHS.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC807-T
Bipolar Transistors - BJT BC807-T
Bipolar Transistors - BJT PNP 0.8A 45V Gen Pur

Bipolar Transistors - BJT PNP 0.8A 45V Gen Pur

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BC807-T
Product Name Bipolar Transistors - BJT
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