Rectron Semiconductor Inc. Bipolar Transistors - BJT 2N4401-T

Description
Bipolar Transistors - BJT NPN 0.6A 40V Gen Pur
Description
Bipolar Transistors - BJT NPN 0.6A 40V Gen Pur
Datasheet
Datasheet Summary
Powered by GS/AI

The 2N4401 is an NPN bipolar junction transistor designed for medium-power amplification and switching applications with collector currents up to 500 mA. It is available in TO-92 and SOT-23 packages, with a maximum collector-emitter voltage of 40 V and continuous collector current of 600 mA. The device has a power dissipation of 625 mW in TO-92 and 350 mW in SOT-23, and operating junction temperature ranges from -55°C to +150°C. It meets AEC-Q200 and RoHS standards. DC current gain ranges from 40 to 300, with collector-emitter saturation voltage up to 0.75 V at 500 mA. The current gain-bandwidth product is 250 MHz.

Datasheet Summary
Powered by GS/AI

The 2N4401 is an NPN bipolar junction transistor designed for medium-power amplification and switching applications with collector currents up to 500 mA. It is available in TO-92 and SOT-23 packages, with a maximum collector-emitter voltage of 40 V and continuous collector current of 600 mA. The device has a power dissipation of 625 mW in TO-92 and 350 mW in SOT-23, and operating junction temperature ranges from -55°C to +150°C. It meets AEC-Q200 and RoHS standards. DC current gain ranges from 40 to 300, with collector-emitter saturation voltage up to 0.75 V at 500 mA. The current gain-bandwidth product is 250 MHz.

Suppliers

Company
Product
Description
Supplier Links
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N4401-T
Bipolar Transistors - BJT 2N4401-T
Bipolar Transistors - BJT NPN 0.6A 40V Gen Pur

Bipolar Transistors - BJT NPN 0.6A 40V Gen Pur

Buy Now Datasheet

Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number 2N4401-T
Product Name Bipolar Transistors - BJT
Unlock Full Specs
to access all available technical data