The 2N2222A is an NPN silicon planar switching transistor in a TO-18 metal can package, with a base diameter of 4.52 to 4.97 mm and a height of 12.70 mm. It has a collector-emitter voltage rating of 40 V, a collector current of 800 mA, and a power dissipation of 500 mW at 25°C. The DC current gain (hFE) ranges from 35 to 300 depending on collector current and collector-emitter voltage. The current gain bandwidth product exceeds 300 MHz. Switching characteristics include a delay time under 10 ns, rise time under 25 ns, storage time under 225 ns, and fall time under 60 ns. The operating junction temperature range is -65°C to +200°C. Pin configuration is emitter, base, collector.
Bipolar Transistors - BJT TO-18
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2N2222A |
| Product Name | Bipolar Transistors - BJT |
