Rectron Semiconductor Inc. Bipolar Transistors - BJT 2N2219A

The 2N2219A is an NPN silicon planar switching transistor in a TO-39 metal can package, intended for switching and linear applications. It has a collector-emitter voltage rating of 40 V, a continuous collector current of 800 mA, and a power dissipation of 800 mW at 25°C. The device operates with a junction temperature range of -65°C to +200°C. Electrical characteristics include a DC current gain (hFE) of 100 to 300 at IC=150mA and VCE=10V, and a transition frequency (ft) greater than 300 MHz at IC=20mA. Switching times are specified as delay time less than 10 ns, rise time less than 25 ns, storage time less than 225 ns, and fall time less than 60 ns under pulse conditions. The TO-39 package has a pin configuration of emitter, base, and collector, with physical dimensions including a body diameter of 8.50 to 9.39 mm and height of 12.70 mm.