Qorvo 0.5 - 6 GHz, 100 Watt, High Power GaN Switch TGS2355-SM

Description
Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/−40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms. The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration. Lead-free and RoHS compliant. Evaluation boards available on request.
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0.5 - 6 GHz, 100 Watt, High Power GaN Switch - TGS2355-SM - Qorvo
Greensboro, NC, United States
0.5 - 6 GHz, 100 Watt, High Power GaN Switch
TGS2355-SM
0.5 - 6 GHz, 100 Watt, High Power GaN Switch TGS2355-SM
Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process. Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/−40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms. The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration. Lead-free and RoHS compliant. Evaluation boards available on request.

Qorvo's TGS2355–SM is a Single-Pole, Double–Throw (SPDT) reflective switch fabricated on Qorvo’s QGaN25 0.25um GaN on SiC production process.

Operating from 0.5 to 6GHz, the TGS2355–SM typically supports up to 100W input power (pulsed) handling at control voltages of 0/−40 V. This switch maintains low insertion loss of 1.1 dB or less and greater than 40 dB isolation, making it ideal for high power switching applications across both defense and commercial platforms.

The TGS2355–SM is offered in a 5 x 5 mm air-cavity QFN package comprised of an aluminum-nitride base with a LCP epoxy-sealed lid. This, along with the minimal DC power consumption, allows for easy system integration.

Lead-free and RoHS compliant.

Evaluation boards available on request.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category IC Analog Switches
Product Number TGS2355-SM
Product Name 0.5 - 6 GHz, 100 Watt, High Power GaN Switch
Standards and Certifications RoHS
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