The QPD1004A is a 25W (P3dB), 50V, 30-1400MHz, GaN on SiC HEMT with an integrated 50Ω input matching network, housed in a 6 × 5 × 0.85mm DFN package. It supports CW and pulsed operation, with a typical power added efficiency of up to 73.7% at 600MHz in efficiency-tuned mode and 66.7% at 500MHz under CW conditions. The device features a thermal resistance of 3.25°C/W from junction to case at 85°C backside temperature and is RoHS compliant, lead-free, halogen-free, and antimony-free. It meets ESD protection standards of 250V HBM and 1000V CDM, and is rated for operation from -40°C to +85°C with a maximum channel temperature of +250°C. The QPD1004ATR7 variant is supplied in a 750-piece 7-inch reel format.
25W, 30-1200 MHZ, GAN RF INPUT-M
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2312-QPD1004ATR7TR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 8-VDFN Exposed Pad |
