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Company

Product

Description

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Shenzhen, Guangdong, China

Memory
C-1600D3SR8VRN/4G

Memory C-1600D3SR8VRN/4G

Memory IC

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Technical Specifications

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Rochester Electronics

$Memory IC and Storage Component - 505-258217\HYS72T256000HR-5-A - ERSAELECTRONICS PTE. LTD.$

Infineon Technologies AG

Micross Components, Inc.

Specs

Memory Category SRAM; SRAM Chip

Access Time 12 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

Texas Instruments

Specs

Operating Temperature 0 to 70 C (32 to 158 F)

Package Type 84-LCC (J-Lead)

Supply Voltage 4.5V ~ 5.5V