The PMS0400065M is a silicon carbide power MOSFET in a TO-247-4L package, rated for a maximum drain-source voltage of 650 V and a continuous drain current of 35 A at 100°C case temperature. Its drain-source on-state resistance is 34 mΩ at 15 V gate-source voltage and 17.6 A drain current, rising to 35 mΩ at 175°C junction temperature. The gate-source operating voltage is recommended between -5 V and +15 V. The device operates with a junction and storage temperature range of -55°C to 175°C. The body diode forward voltage is 2.8 V at -5 V gate-source voltage and 8.8 A current.
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| Richardson RFPD | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | PMS0400065M |
| Product Name | Silicon Carbide MOSFETs |
| rDS(on) | 0.0400 ohms |
