PANJIT SemiConductor Single FETs, MOSFETs PSMP032N08NS1_T0_00601

The PSMP032N08NS1 is an 80V N-channel enhancement mode MOSFET in a TO-220AB-L package, designed for applications such as BMS, BLDC, and SMPS synchronous rectification. It has a maximum drain-source on-state resistance of 3.4 mΩ at 10V gate-source voltage and 50A drain current, and a continuous drain current rating of 166A at 25°C. The device supports a pulsed drain current of 480A and is 100% avalanche tested with a single pulse avalanche energy of 722 mJ. Thermal resistance from junction to case is 0.8°C/W, and the operating junction and storage temperature range is -55°C to 175°C. The part is RoHS 2.0 compliant and uses green molding compound per IEC 61249. Its terminals are solderable per MIL-STD-750, Method 2026.