PANJIT SemiConductor Single FETs, MOSFETs PJW3P06A_R2_00001

Description
P-Channel 60V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223
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Description
P-Channel 60V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223
Request a Quote Datasheet

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Single FETs, MOSFETs - 3757-PJW3P06A_R2_00001TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3757-PJW3P06A_R2_00001TR-ND
Single FETs, MOSFETs 3757-PJW3P06A_R2_00001TR-ND
P-Channel 60V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223

P-Channel 60V 3A (Ta) 3.1W (Ta) Surface Mount SOT-223

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1085348-PJW3P06A_R2_00001 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1085348-PJW3P06A_R2_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1085348-PJW3P06A_R2_00001
Win Source Part Number: 1085348-PJW3P06A_R2_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 2,500 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta) Package / Case: TO-261-4, TO-261AA Supplier Device Package: SOT-223 Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJW3P06A_R2_000 01CT,3757-PJW3P06A_R 2_00001TR,3757-PJW3P 06A_R2_00001DKR Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1085348-PJW3P06A_R2_00001
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel
Standard Package: 2,500
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Panjit International Inc.
Other Names: 3757-PJW3P06A_R2_00001CT,3757-PJW3P06A_R2_00001TR,3757-PJW3P06A_R2_00001DKR
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PJW3P06A_R2_00001 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PJW3P06A_R2_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PJW3P06A_R2_00001
60V P-CHANNEL ENHANCEMENT MODE M

60V P-CHANNEL ENHANCEMENT MODE M

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 3757-PJW3P06A_R2_00001TR-ND 1085348-PJW3P06A_R2_00001 PJW3P06A_R2_00001
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel
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