PANJIT SemiConductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single PJP18N20_T0_00001

Description
Win Source Part Number: 1153139-PJP18N20_T0_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: Not Applicable HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJP18N20_T0_000 01 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1153139-PJP18N20_T0_00001 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 3757-PJP18N20_T0_00001-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PJP18N20_T0_00001 - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Win Source Part Number: 1153139-PJP18N20_T0_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: Not Applicable HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJP18N20_T0_000 01 Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1153139-PJP18N20_T0_00001 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1153139-PJP18N20_T0_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1153139-PJP18N20_T0_00001
Win Source Part Number: 1153139-PJP18N20_T0_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: Not Applicable HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJP18N20_T0_000 01 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1153139-PJP18N20_T0_00001
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 89W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1017 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: Not Applicable
HTSUS: 8541.29.0095
Mfr: Panjit International Inc.
Other Names: 3757-PJP18N20_T0_00001
Drive Voltage (Max Rds On, Min Rds On): 10V

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Single FETs, MOSFETs - 3757-PJP18N20_T0_00001-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
3757-PJP18N20_T0_00001-ND
Single FETs, MOSFETs 3757-PJP18N20_T0_00001-ND
N-Channel 200V 18A (Tc) 89W (Tc) Through Hole TO-220AB

N-Channel 200V 18A (Tc) 89W (Tc) Through Hole TO-220AB

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - PJP18N20_T0_00001 - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
PJP18N20_T0_00001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs PJP18N20_T0_00001
TO-220AB, MOSFET

TO-220AB, MOSFET

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1153139-PJP18N20_T0_00001 3757-PJP18N20_T0_00001-ND PJP18N20_T0_00001
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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