PANJIT SemiConductor Single FETs, MOSFETs PJMF080N65FR2_T0_00601

650V N-Channel Super Junction MOSFET in an ITO-220AB-F package, rated for a continuous drain current of 29.2 A at 25°C and 18.4 A at 100°C, with a maximum on-state resistance of 75 mΩ at 10 V gate drive. It features a fast-recovery body diode with a reverse recovery time of 144.4 ns and is 100% avalanche and Rg tested. The device meets RoHS 2.0 and IEC 61249 green molding compound standards, has a gate charge of 78.5 nC, and includes an insulation withstand voltage of 3.5 kV. Thermal resistance from junction to case is 0.5 to 0.8 °C/W. Operating junction and storage temperature range is -55°C to 150°C.