PANJIT SemiConductor Single FETs, MOSFETs PJD7NA60_R2_00001

N-channel MOSFET with 600 V drain-source voltage and 7 A continuous drain current, housed in TO-252AA package, designed for high switching speed applications with low gate charge and improved dv/dt capability. Maximum drain-source on-resistance is 1.2 Ω at 10 V gate-source voltage and 3.5 A drain current. Junction temperature range is -55°C to 150°C. Package weight is 0.297 grams. Complies with RoHS 2.0 and IEC 61249 green molding compound standards. Terminals are solderable per MIL-STD-750, Method 2026.