PANJIT SemiConductor Single FETs, MOSFETs PJD60R980E_L2_00001

PJD60R980E_L2_00001 is a 600V N-channel super junction MOSFET in a TO-252AA package, rated for a continuous drain current of 4A at 25°C and 2.2A at 100°C, with a maximum on-resistance of 0.98Ω at 10V gate voltage and 1.5A drain current. It has a single pulse avalanche energy rating of 32mJ, a gate-source voltage limit of ±20V, and operates within a junction and storage temperature range of -55°C to 150°C. The device meets RoHS 2.0 and IEC 61249 green molding compound standards. Thermal resistance is 62.5°C/W from junction to ambient when mounted on a 1 in² copper pad. It is supplied in a 3,000-piece 13-inch reel.