PANJIT SemiConductor Single FETs, MOSFETs PJD60R620E_L2_00001

PJD60R620E_L2_00001 is a 600V N-channel super junction MOSFET in a TO-252AA package, weighing 0.297 grams. It has a maximum continuous drain current of 7 A at 25°C and 4.5 A at 100°C, with a drain-source on-state resistance of up to 0.62 Ω at 10 V gate-source voltage and 2.4 A drain current. The device supports a single pulse avalanche energy of 85 mJ and operates within a junction and storage temperature range of -55°C to 150°C. Thermal resistance is 62.5 °C/W from junction to ambient when mounted on a 1 in² copper pad. It meets RoHS 2.0 and IEC 61249 standards for halogen-free and green molding compound compliance.