PANJIT SemiConductor Single FETs, MOSFETs PJD5P10A_L2_00001

P-Channel 100V MOSFET in TO-252AA package for surface mount applications, rated for continuous drain current of -5 A at 25°C and -3.1 A at 100°C, with a maximum power dissipation of 30 W at 25°C and 12 W at 100°C. Drain-source on-state resistance is less than 650 mΩ at -10 V gate-source voltage and -2.5 A drain current, and less than 700 mΩ at -4.5 V and -2 A. Features low gate charge, low reverse transfer capacitance, and high switching speed. Operating junction and storage temperature range is -55°C to 150°C. The device is lead-free and compliant with EU RoHS 2011/65/EU and IEC61249 halogen-free standards. Thermal resistance from junction to case is 4.2°C/W.