PANJIT SemiConductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single PJD4NA90_L2_00001

Win Source Part Number: 1085251-PJD4NA90_L2_ 00001 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 900 V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 90W (Tc) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Panjit International Inc. Other Names: 3757-PJD4NA90_L2_000 01DKR,3757-PJD4NA90_ L2_00001CT,3757-PJD4 NA90_L2_00001TR Drive Voltage (Max Rds On, Min Rds On): 10V