PANJIT SemiConductor Single Bipolar Transistors MMBT3906FN3_R1_00501

MMBT3906FN3 is a PNP silicon switching transistor in a DFN1006-3L package, with a maximum collector-emitter voltage of -40 V and a continuous collector current of -200 mA. It dissipates up to 250 mW with a thermal resistance of 500 °C/W. The device has a junction temperature range of -55 °C to +150 °C and meets RoHS 2.0 and IEC 61249 environmental standards. Current gain (hFE) ranges from 30 to 300 depending on collector current, and collector-emitter saturation voltage is specified up to -0.95 V at -50 mA collector current. Switching times include a delay time of 35 ns, rise time of 35 ns, storage time of 225 ns, and fall time of 75 ns. The gain-bandwidth product is 250 MHz.