PANJIT SemiConductor Single Bipolar Transistors BC859B-AU_R1_000A1

PNP general purpose transistors in a SOT-323 package, designed for amplifier applications with a continuous collector current of 100mA and power dissipation of 250mW. The BC859BW variant has a collector-emitter voltage rating of 30V, collector-base voltage of 30V, and emitter-base voltage of 5V. DC current gain ranges from 200 to 450 at I_C = -2mA and V_CE = -5V. Devices comply with RoHS 2011/65/EU and IEC 61249 standards for halogen-free materials. Thermal resistance is 500°C/W when mounted on FR4 PCB with a single-sided copper pad. Junction and storage temperature range is -55°C to 150°C.