PANJIT SemiConductor Single Bipolar Transistors BC857C-AU_R1_000A1

PNP general purpose transistor in SOT-323 package, rated for a collector-emitter voltage of 45 V, collector current of 100 mA, and power dissipation of 250 mW. It has a DC current gain (hFE) of 420 to 800 at IC = -2 mA and VCE = -5 V, with a collector-emitter saturation voltage of up to 0.65 V at IC = -100 mA and IB = -5 mA. The device meets RoHS 2011/65/EU and IEC 61249 standards for halogen-free materials, and is suitable for general amplifier applications. Thermal resistance is 500 °C/W from junction to ambient when mounted on an FR4 PCB with a mini pad.