PANJIT SemiConductor Single Bipolar Transistors BC850CW_R1_00001

NPN general purpose transistor for amplifier applications in SOT-323 surface mount package, with a continuous collector current of 100 mA and maximum power dissipation of 250 mW. Collector-emitter voltage rating is 45 V, collector-base voltage is 50 V, and emitter-base voltage is 6.0 V. Junction and storage temperature range is -55 to 150 °C. dc current gain (hFE) ranges from 420 to 800 at IC=2 mA and VCE=5 V. Compliant with RoHS 2.0 and IEC 61249. Packaged in tape and reel formats.