PANJIT SemiConductor Single Bipolar Transistors BC850B_R1_00001

NPN silicon epitaxial planar transistors for general-purpose amplifier applications, housed in the SOT-323 surface-mount package. The device supports a continuous collector current of 100 mA, a maximum power dissipation of 250 mW, and collector-emitter voltages up to 45 V for the BC850B variant. Typical thermal resistance is 500 °C/W. Junction and storage temperature range is -55 °C to 150 °C. The part is RoHS 2.0 compliant and uses green molding compound per IEC 61249. DC current gain (hFE) at IC=2 mA and VCE=5 V ranges from 200 to 450. Packaging is available in 3 k per 7" or 12 k per 13" plastic reel.